Growth of potato genotypes under different silicon concentrations

Ahos Odin Severo Dorneles, Aline Soares Pereira, Gessieli Possebom, Victoria Martini Sasso, Liana Veronica Rossato, Luciane Almeri Tabaldi

Abstract


The aim of this work was to verify the beneficial potential of Silicon
on the growth of potato genotypes in order to select potato genotypes that best respond to Si application. Four potato genotypes were used: SMIJ319-7, Dakota Rose, SMIF212-3 and SMINIA793101, grown in hydroponic system. The plants were transferred to nutrient solutions with four Si concentrations: 0; 0.5; 2.5; and 5.0 mM as NaSiO3. After seven days of exposure to treatments, leaf area, leaf number, shoot length, and fresh and dry weight of roots, stem and leaves were determined. The application of 0.5 mM Si promoted an increase in growth parameters of plants used in this work, mainly in leaf area, leaf number,
and leaf and stem dry weight. However, the application of higher concentrations of Si (2.5 mM) promoted reduction in the growth parameters, mainly in leaf area. It was also possible to observe a genotypic variation with respect to Si, SMIJ319-7 and SMIF212-3 genotypes being the most responsive to Si. Therefore, the concentration of 0.5 mM Si is considered optimal for potentiating the growth of potato plants, and SMIJ319-7 and SMIF212-3 genotypes are the most responsive to Si.


Keywords


beneficial element; hydroponic; Solanum tuberosum; stress

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DOI: http://dx.doi.org/10.13128/ahs-21873



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